On the Capacitance Spectroscopy of Cu2ZnSnS4 Typed Solar Cells Anisotype Heterojunction by SCAPS-1D

One of the most reliable renewable energy source is solar from sun. However, materials have been unable to meet their potentials as a good absorber layer in thin films. Most recently, Cu2ZnSnS4 (CZTS) identified layer, yet same problem persists. In this study, we examined depletion capacitance vis-a-vis voltage and range frequencies based on heterojunction types structures. The modeled cell consisted three used buffer (BL) (ZnO:Al (AZO), In2S3 (IS) CH3NH3PbCl3 (PVKT)). band gap model n/n/p anisotype for BLs were constructed obtained data simulated cells. offsets ∆EC ∆EV electron-volts at n/n AZO, IS PVKT are; 0.07071 0.18794, 0.09768 0.72367 0.67541 2.54541 respectively. Also, n/p 0.14251 1.93251, 0.49011 1.73011 0.34041 1.73920 Based trivial AC signal that was superimposed dc biased charges, AZO shows an exponential response reliance across region. Capacitance spectroscopy showed may be manipulated make use junction when need electronically vary it arises.